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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * Low leakage current Ideal for surface mounted applications Metallurgically bonded construction Fast recovery times for high efficiency Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals 0.155 (3.94) 0.130 (3.30) FBM11PT THRU FBM17PT SMB 0.083 (2.11) 0.077 (1.96) (2) MECHANICAL DATA Case: JEDEC SMB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight: 0.003 ounces, 0.093 gram (1) 0.190 (4.75) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 HZ, resistive or inductive load. For capacitive load, derate current by 20%. 0.220 (5.59) 0.205 (5.21) Dimensions in inches and (millimeters) SMB MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TL = 110oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) (Note 2) Maximum Thermal Resistance (Note 3) Operating and Storage Temperature Range R JA SYMBOL VRRM VRMS VDC IO IFSM CJ R JL FBM11PT FBM12PT FBM13PT FBM14PT FBM15PT FBM16PT FBM17PT UNITS Volts Volts Volts Amps Amps pF o o 50 35 50 100 70 100 200 140 200 400 280 400 1.0 30 15 30 75 -65 to +150 600 420 600 800 560 800 1000 700 1000 C/W C/W o TJ, TSTG C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 4) NOTES : 1. 2. 3. 4. SYMBOL VF FBM11PT FBM12PT FBM13PT FBM14PT FBM15PT FBM16PT FBM17PT UNITS Volts uAmps uAmps 1.3 5.0 IR 100 trr 150 250 500 nSec 2004-10 Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts Thermal Resistance Junction to terminal 6.0 mm2 copper pads to each terminal Thermal Resistance Junction to ambient 6.0 mm2 copper pads to each terminal Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A RATING CHARACTERISTIC CURVES ( FBM11PT THRU FBM17PT ) 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) 0 PULSE GENERATOR (NOTE 2) -0.25A AVERAGE FORWARD CURRENT, ( A ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.50 1.25 1.00 .75 .50 .25 0 0 (+) 25 Vdc (approx) (-) D.U.T Single Phase Half Wave 60Hz Resistive or Inductive Load 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. 1cm SET TIME BASE FOR 50/100 nS/cm 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) 10 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Pulse Width = 300uS 1% Duty Cycle 10 4.0 TJ =100oC 1.0 1.0 .4 0.1 .1 .04 TJ =25oC TJ =25oC .01 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) 0 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 JUNCTION CAPACITANCE, ( pF ) 100 60 40 20 10 6 4 2 1 1 2 5 10 20 50 100 .1 .2 .4 1.0 2 4 10 20 40 100 NUMBER OF CYCLES AT 60 Hz REVERSE VOLTAGE, ( V ) TJ =25oC 1.8 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, ( A ) 35 30 25 20 15 10 5 0 8.3ms Single Half Sine-Wave (JEDEC Method) |
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